Description
The main objective of the Action is to advance novel gain materials based on III-V-N semiconductor compounds including dilute nitrides and indium rich GaInN.
Action keywords
Dilute nitrides - GaNAs - GaInNAs - GaInNAs-P - Indium-rich GaInN
Parties
Action Leadership Positions
| Role | Leader |
|---|---|
| Action Chair | |
| Action Vice-Chair |
Management Committee
| Country | MC Member |
|---|---|
| Czech Republic | |
| Czech Republic | |
| Denmark | |
| Denmark | |
| Finland | |
| Finland | |
| France | |
| France | |
| Germany | |
| Germany | |
| Greece | |
| Greece | |
| Iceland | |
| Iceland | |
| Ireland | |
| Israel | |
| Italy | |
| Italy | |
| Lithuania | |
| Lithuania | |
| Poland | |
| Poland | |
| Portugal | |
| Romania | |
| Romania | |
| Spain | |
| Spain | |
| Sweden | |
| Türkiye | |
| Türkiye | |
| Türkiye | |
| United Kingdom |
| Country | MC Substitute |
|---|---|
| France | |
| Germany | |
| Romania | |
| Romania | |
| Spain | |
| Spain | |
| Türkiye | |
| United Kingdom |
COST International Partner Countries
| Institution Name | MC Observer |
|---|---|
| National Taiwan University of Science and Technology |
Main Contacts
